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Negative Parabolic Magneto-resistance in a strongly interacting 2D Hole system in GaAs/AlGaAs

ORAL

Abstract

Electron-electron interactions are believed to be an important factor in the origin of the 2D Metal-Insulator Transition observed in strongly correlated 2D electron/hole systems. In the weakly interacting (Fermi Liquid) regime, these interactions can be shown to cause a negative parabolic correction to the magneto-resistance of the 2D electron/hole system. We observe a similar magneto-resistance effect in the strong field regime (ωcτ > 1) for a strongly interacting 2D hole liquid (rs=20-30) in a GaAs/AlGaAs quantum well at low temperatures (T =0.09 - 1 K), in a hole density range (p=0.98-1.98 *1010 /cm2) close to the critical density for the 2D Metal-Insulator transition, where the temperature dependence of resistivity is non-monotonic. We study the extracted hole-hole interaction correction to Drude conductivity in this regime and compare its temperature dependence to conventional Fermi Liquid theories. This study gives insight on the validity of a Fermi Liquid picture in the strongly interacting regime and explores whether this conventional picture of interacting electron systems can be used to explain the origin of the 2D metallic state.

Presenters

  • Arvind Shankar Kumar

    Case Western Reserve University

Authors

  • Arvind Shankar Kumar

    Case Western Reserve University

  • Chieh-Wen Liu

    Case Western Reserve University

  • Shuhao Liu

    Case Western Reserve University

  • Loren Pfeiffer

    Princeton University, Electrical Engineering, Princeton University, Electrical engineering, Princeton university, Princeton Univ, Department of Electrical Engineering, Princeton University, electrical engineering, Princeton, Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA

  • Kenneth West

    Princeton University, Electrical Engineering, Princeton University, Electrical engineering, Princeton university, Princeton Univ, Department of Electrical Engineering, Princeton University, electrical engineering, Princeton, Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA

  • Xuan Gao

    Case Western Reserve University