Industrial quantum dot arrays for spin-qubit quantum computation by all-optical 300mm lithography

Using quantum dot arrays fabricated in a 300mm process line, we demonstrate well-controlled single and double quantum dots formed in an isotopically enriched ²⁸Si-MOS substrate. These devices are fully fabricated with optical lithography, plasma etching, and chemical-mechanical polishing techniques for patterning, compatible with state of the art industrial fabrication.
In the many-electron regime independent tunnel-barrier control is shown, a prerequisite for high-fidelity two-qubit control. Data driven process improvements of the quantum dots have led to a significant increase in charge-sensing sensitivity capable of single shot read-out
Using state of the art charge detection methods, we are able to observe single-electron occupation of these quantum dot arrays. The few-electron regime shows stable device behavior, with dots forming both under the plunger and barrier gates. The occurrence of spurious dots is analyzed.
Here, we will show our latest results on utilizing these quantum dot arrays as spin-qubits.