Improving Gate Dielectrics for Reducing Charge Noise in Si/SiGe Quantum Dots
ORAL
Abstract
References:
[1] H. Kobayashi et al. Applied Surface Science 256 (19) 5744 (2010).
[2] E. J. Connors et al. Preprint at https://arxiv.org/abs/1907.07549
[3] S. N. Shevchenko et al. PRB 98, 195434 (2018)
[4] X. Mi et al. Phys. Rev. B 98, 161404 (2018)
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Presenters
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Nathan Holman
University of Wisconsin - Madison, Department of Physics, University of Wisconsin-Madison, Madison WI, USA
Authors
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Nathan Holman
University of Wisconsin - Madison, Department of Physics, University of Wisconsin-Madison, Madison WI, USA
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John Dodson
University of Wisconsin - Madison
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Evan MacQuarrie
University of Wisconsin - Madison
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Lisa F Edge
HRL, HRL laboratories, LLC, 3011 Malibu Canyon Road, Malibu, CA 90265, USA, HRL Laboratories, HRL Laboratories LLC, 3011 Malibu Canyon Road, Malibu, California 90265, USA, HRL Laboratories, LLC
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Robert F McDermott
University of Wisconsin - Madison, Department of Physics, University of Wisconsin-Madison, Madison WI, USA, Physics, University of Wiconsin - Madison
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Susan Nan Coppersmith
University of Wisconsin - Madison, University of New South Wales, Sydney, Australia, Department of Physics, University of Wisconsin-Madison, University of Wisconsin-Madison, University of New South Wales, University of Wisconsin-Madison, The University of New South Wales
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Mark G Friesen
University of Wisconsin - Madison, Department of Physics, University of Wisconsin-Madison, Madison WI, USA, University of Wisconsin-Madison
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Mark Alan Eriksson
University of Wisconsin - Madison, Physics, University of Wisconsin - Madison, Madison, WI USA, Department of Physics, University of Wisconsin-Madison, Madison WI, USA, Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA, University of Wisconsin-Madison