Scanning tunneling microscopy and spectroscopy of graphene on in-plane anisotropic rhenium disulfide

Van der Waals heterostructures made of graphene placed on top of other 2D materials have been shown to affect the band structure of graphene and lead to proximity-induced novel phenomena. In this talk, we focus on a system that has graphene placed on top of the in-plane anisotropic semiconductor ReS₂. Using scanning tunneling microscopy and spectroscopy, we characterized the changes at the atomic scale in the structure and electronic properties of Dirac electrons placed in the longitudinal periodic potential of ReS₂.