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α-Sn Magnetotransport Devices

ORAL

Abstract

α-Sn, the diamond-cubic phase of tin, is of significant scientific interest due to its topological band structure and single-element nature. Consistent high-quality growth on insulating CdTe opens the doors to unconventional electronics using a widely available material. After verifying epitaxial growth of our films, we perform transport measurements to characterize the electronic carriers in the material. We identify two-channel transport and attribute the n-type transport to a semimetallic channel that tentatively suggests Dirac behavior, while the p-type component corresponds to growth impurities resulting from the CdTe substrate. We apply a field effect gate voltage in order to map out the charge neutrality point and modulate the channel between majority n-type and majority p-type carriers. Careful preparation of the CdTe surface before growth is considered crucial to attain a low dopant density and accessible topological states on an insulating substrate. This work readily lends itself to the development of topologically enabled devices for fieldable applications such as low power electronics in order to achieve a high level of computation at the edge.

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Presenters

  • Owen Vail

    US Army Rsch Lab - Adelphi, Army Research Lab

Authors

  • Owen Vail

    US Army Rsch Lab - Adelphi, Army Research Lab

  • Yu hao Chang

    Materials Department, University of California, Santa Barbara, Materials, University of California, Santa Barbara

  • Sean Harrington

    Materials Department, University of California, Santa Barbara, Dept. of Materials Engineering, Univ. of California, Santa Barbara, CA, USA, IEE, UC Santa Barbara, Univ of California, Santa Barbara, University of California, Santa Barbara

  • Patrick Aubrey Folkes

    US Army Rsch Lab - Adelphi

  • Patrick Taylor

    US Army Rsch Lab - Adelphi, US Army Research Laboratory, Army Research Lab, CCDC Adlphi Laboratory Center

  • barbara nichols

    US Army Rsch Lab - Adelphi

  • George J De Coster

    US Army Rsch Lab - Adelphi

  • Chris J Palmstrom

    Materials Department, University of California, Santa Barbara, UCSB, Departments of Electrical and Computer Engineering and Materials, University of California, Santa Barbara, Dept. of Electrical Engineering, Univ. of California, Santa Barbara, CA, USA, Univ. of California, Santa Barbara, Electrical and Computer Engineering Department, University of California, Santa Barbara, University of California, Santa Barbara, IEE, UC Santa Barbara, University of California Santa Barbara, Univ of California, Santa Barbara, Electrical and Computer Engineering, University of California Santa Barbara, Materials and Electrical & Comp. Eng, University of California, Santa Barbara