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Isotopic Effect of Carrier Relaxation in Graphene-hBN Heterostructures

ORAL

Abstract

In atomically thin systems, the choice of substrate plays an important role in the relaxation of photo-excited carriers. In previous work, hexagonal boron nitride (hBN) substrates have been shown to improve the thermal relaxation rates of carriers in graphene as compared to silicon oxide substrates. Naturally occurring boron contains a mixture of two isotopes with atomic masses 10 and 11 with abundances of 20% and 80% respectively. Theoretical studies have predicted a higher thermal conductivity with higher isotopic purity of hBN, due to reduced phonon scattering from isotopic defects. We utilize femtosecond pump-probe spectroscopy to observe the time dynamics of photo-excited carriers in graphene-hBN heterostructures for both natural and isotopically pure hBN.

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Presenters

  • Alexandra Brasington

    Physics, University of Arizona

Authors

  • Alexandra Brasington

    Physics, University of Arizona

  • James H. Edgar

    Kansas state university, Chemical Engineering, Kansas State University, Department of Chemical Engineering, Kansas State University, Tim Taylor Department of Chemical Engineering, Kansas State University, Kansas State University

  • Takashi Taniguchi

    National Institute for Materials Science, Japan, National Institute for Material Science, National Institute for Materials Science, National Institute for Materials Science, Tsukuba, Research Center for Functional Materials, NIMS, nims, Advanced Materials Laboratory, National Institute for Materials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, NIMS, National Institute for Material Science - Japan, NIMS Tsukuba, National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan., National Institute for Materials Science (NIMS), National Institute for Materials Science,Tsukuba, Ibaraki 305-0047, Japan, Advanced Materials Laboratory, NIMS, Japan, National Institute for Materials Science,1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Materials Science, National Institute for Materials Science, University of Tsukuba, National Institute for Materials Science, Tsukuba, Japan, National Institue for Material Science, Tsukuba, Advanced Materials Laboratory, NIMS, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan, Advanced Matrials Lab, NIMS, National Institute for Material Science, Tsukuba, Japan, National institute for materials science, NIMS-Tsukuba, NIMS, Japan, National Institute for Materials Science, Namiki Tsukuba Ibaraki, Japan, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, Advanced Materials Laboratory, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science 1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science (Japan), Physics, NIMS, National Institute of Materials Science, Japan, National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan, NIMS - Tsukuba

  • Kenji Watanabe

    National Institute for Materials Science, Japan, National Institute for Material Science, National Institute for Materials Science, National Institute for Materials Science, Tsukuba, Research Center for Functional Materials, NIMS, nims, Advanced Materials Laboratory, National Institute for Materials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, NIMS, National Institute for Material Science - Japan, NIMS Tsukuba, National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan., National Institute for Materials Science (NIMS), National Institute for Materials Science,Tsukuba, Ibaraki 305-0047, Japan, Advanced Materials Laboratory, NIMS, Japan, National Institute for Materials Science,1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Materials Science, National Institute for Materials Science, University of Tsukuba, National Institute for Materials Science, Tsukuba, Japan, National Institute for Material Science, Japan, National Institue for Material Science, Tsukuba, Advanced Materials Laboratory, NIMS, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan, Advanced Matrials Lab, NIMS, National Institute for Material Science, Tsukuba, Japan, National institute for materials science, NIMS-Tsukuba, NIMS, Japan, National Institute for Materials Science, Namiki Tsukuba Ibaraki, Japan, NIRM, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, Advanced Materials Laboratory, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science 1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science (Japan), Physics, NIMS, National Institute of Materials Science, Japan, National Institute of Materials Science (NIMS), National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan, NIMS - Tsukuba

  • Arvinder S Sandhu

    Physics, University of Arizona

  • Brian J LeRoy

    Physics Department, University of Arizona, Physics, University of Arizona, Univ of Arizona, Department of Physics, University of Arizona