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Photoluminescence study of non-polar m-plane InGaN and near strain-balanced AlGaN/InGaN superlattices

ORAL

Abstract

We present the first detailed study of the temperature-dependence of photoluminescence (PL) from m-plane bulk InxGa1-xN (x<0.25) layers and near strain-balanced AlGaN/InGaN superlattices grown by plasma-assisted molecular-beam epitaxy on free standing m-plane GaN substrates. The experimental PL peak positions were found to deviate from inter-band transition energies calculated using structural parameters obtained from high-resolution x-ray diffraction. The effect is stronger for superlattices than for bulk InGaN films. The temperature dependence of PL suggests the discrepancy is due to localization centers in InGaN. The low-temperature PL linewidths are narrower than some published results for both InxGa1-xN (x<0.1) and Al0.2Ga0.8N/In0.09Ga0.91N superlattices indicating lower alloy inhomogeneity than previously reported. We also observed the PL intensity drops dramatically as temperature increases. This suggests the presence of a high-density of non-radiative defects. We will describe our efforts to optimize growth conditions to increase PL efficiency and reduce PL linewidth at room temperature.

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Presenters

  • Yang Cao

    Physics and Astronomy, Purdue Univ

Authors

  • Yang Cao

    Physics and Astronomy, Purdue Univ

  • Alexander Senichev

    Physics and Astronomy, Purdue Univ

  • Brandon Dzuba

    Physics and Astronomy, Purdue Univ

  • Trang Nguyen

    Physics and Astronomy, Purdue Univ

  • Michael Manfra

    Physics and Astronomy, Purdue Univ, Department of Physics and Astronomy and Station Q Purdue, Birck Nanotechnology Center, School of Materials Engineering, School of Electrical and Computer Engineering, Purdue, Purdue Univ, Purdue University, Microsoft Quantum at Station Q Purdue, Department of Physics and Astronomy, Birck Nanotechnology Center, Microsoft Quantum Purdue, School og Materials Engineering & School of Electrical and Computer Engineering, P, Physics and Astronomy, Purdue University, Department of Physics and Astronomy and Station Q Purdue, Purdue University, Department of Physics and Astronomy and Microsoft Quantum Purdue, Purdue University, West Lafayette, Indiana 47907 USA, Department of Physics and Astronomy, PURDUE UNIVERSITY, Department of Physics and Astronomy, Microsoft Quantum Purdue, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA, Physics, Purdue University

  • Oana Malis

    Physics and Astronomy, Purdue Univ