Mirror symmetry breaking and the stacking-shift effect in twisted trilayer graphene
ORAL
Abstract
A continuum model of twisted trilayer graphene devices was constructed using ab initio first principles theory to assess the dependence of electronic structure on local stacking. We have applied the model to study electronic structure and transport properties as a function of band filling. When the middle layer of Bernal stacking trilayer graphene is twisted a mirror symmetry exists which is absent in the case of twisted top layers and twisted bilayer graphene.The mirror symmetry decouples band with even and odd parity, but is lost when the top layer is shifted relative to the bottom layer or an electric field is applied.We study the consequences of mirror and C3v symmetry broking by this top layer lateral stacking shift effect or electric field, focusing on the electronic structure and transport properties such as the longitudinal and Hall conductivities of this system.Whereas a lateral shift has no effect for either top layer twisted trilayers or bilayers, large changes in electronic structure occur for middle-layer twisted trilayers.
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Presenters
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Chao Lei
University of Texas at Austin
Authors
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Chao Lei
University of Texas at Austin
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Lukas Linhart
Vienna University of Technology
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Wei Qin
University of Texas at Austin
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Allan MacDonald
University of Texas at Austin, Physics, University of Texas at Austin, Department of Physics, University of Texas at Austin, Department of Physics, The University of Texas at Austin