Electrical resistivity relaxation under uniaxial strain in BaIrO<sub>3</sub> at room temperature
ORAL
Abstract
We investigate the 5d transition metal oxide BaIrO3, in which the ground state is strongly dependent on the corner sharing Ir-O-Ir buckling angle between the face sharing octahedral trimers. We compare nanoindentation and resistivity under uniaxial strain, finding a strong hysteretic behavior in the resistivity that is driven by a strain dependent relaxation. This relaxation exhibits logarithmic time dependence, and also emerges in the lattice relaxation as creep. These observations highlight the strong mechanical and electrical coupling in BaIrO3, and point to the relaxation mechanisms sharing the same origin. Our results promote the value of utilizing uniaxial strain testing and nanoindentation as a novel technique to probe the structural sensitivity of quantum materials.
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Presenters
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Peter Siegfried
University of Colorado, Boulder, Physics, University of Colorado, Boulder
Authors
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Peter Siegfried
University of Colorado, Boulder, Physics, University of Colorado, Boulder
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Hengdi Zhao
University of Colorado, Boulder, Physics Department, University of Colorado Boulder
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Gang Cao
University of Colorado, Boulder, Department of Physics, University of Colorado at Boulder, Physics Department, University of Colorado Boulder, Physics, University of Colorado, Boulder, University of Colorado at Boulder, Physics, University of Colorado Boulder
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Minhyea Lee
University of Colorado, Boulder, Physics, University of Colorado, Boulder