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Nanoscale structure of the orbital magnetic moment of a single dopant spin in a semiconductor

ORAL

Abstract

The localized electron spin of a single impurity in a semiconductor is a promising system to realize quantum information schemes. In this work we investigate the orbital contribution to the magnetic moment originated from the spin-orbit induced circulating current [1] associated with the ground state of a single magnetic impurity in III-V semiconductors. In this project we developed a formalism employing Green's functions obtained by the Koster-Slater technique [2] with a sp3d5s* empirical tight-binding Hamiltonian [3] to describe the host material. We calculated the circulating current and orbital moments of a single Mn dopant in GaAs. The spin-correlated orbital moments originates from the hybridization between the Mn(d5) spin-polarized electrons and the As dangling bonds leading to t2-symmetric triplet acceptor states in the band-gap above the valence band edge.
[1] van Bree, J. and Silov, A.Yu and Koenraad, P.M. and Flatté, M. E., PRL 112, 187201 (2014).
[2] Tang, J.M. and Flatté, M.E., PRL. 92, 047201 (2004).
[3] Jancu, J.M. and Scholz, R. and Beltram, F. and Bassani, F., PRB 57, 6493 (1998).

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Presenters

  • Adonai Rodrigues da Cruz

    Applied Physics, Eindhoven University of Technology

Authors

  • Adonai Rodrigues da Cruz

    Applied Physics, Eindhoven University of Technology

  • Michael Flatté

    Optical Science and Technology Center and Department of Physics, The University of Iowa, Department of Physics and Astronomy, University of Iowa, University of Iowa, Univ of Iowa, University of Iowa, University of Chicago, and Eindhoven University of Technology, Physics and Astronomy, University of Iowa, Department of Physics and Astronomy, The University of Iowa