Photon energy and polarization dependent electronic structure of Cr doped Bi2Se3 thin films
ORAL
Abstract
Here, we reported a comparison study of photon energy and photon polarization dependent electronic structure of Cr-doped and pristine Bi2Se3 to reveal the topological phase in transition metal doped topological insulators. Circular dichroism and photon energy dependent angle resolved photoemission experiment strongly confirm that the Cr doped samples have topologically non-trivial band structure. The surface electronic structure measurements with linear and circular polarized light show signature of the hybridization of the surface states and the impurity bands. Our observation not only provide further spectroscopic information about topological materials but also promotes additional experimental pathways to control the spin-orbital texture in topological materials.
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Presenters
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Turgut Yilmaz
Brookhaven National Laboratory
Authors
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Turgut Yilmaz
Brookhaven National Laboratory
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Genda Gu
Brookhaven National Laboratory, Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Brookhaven national lab, Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Brookhaven National Lab, Condensed Matter Physics and Material Science, Brookhaven National Laboratory, Upton, NY, United States, Brookhaven National Laboratories, Condensed Matter Physics and Material Science Division, Brookhaven National Laboratory
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Elio Vescovo
Brookhaven National Laboratory
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Konstantine Kaznatcheev
Brookhaven National Laboratory
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Boris Sinkovic
Physics, University of Connecticut