Enabling Direct Write Mask Free Fabrication of Low Dimensional Nanoscale Architectures on Different Substrates using Aqueous Inks and CVD synthesis

Low dimensional materials such as nanowires and 2D films, when assembled in vertical or lateral arrangements, often lead to the largely enhanced properties, and new functionalities. While the preparation of layered architectures usually involves multi-step fabrication processes it also relies on mask assisted lithographic techniques. Here we present methodology for controlled selective preparation of 1D and 2D nanostructures of MoS2, WS2 and ZnO in the variety of geometric assemblies by employing parallel direct write patterning (DWP) of aqueous ink precursors on substrates at predefined locations. In a two-step process (1st patterning and 2nd growth) our unconventional fabrication approach enables simple and flexible production of hetero-structures and other architectures based on “mix and match” principle in precisely controlled fashion. Location specific synthesis of materials provides access to as-grown interfaces and rapid testing of materials’ quality, crystallinity and chemical composition which was confirmed by various characterization methods (Raman Spectroscopy, PL, AFM, XRD etc). Acknowledgement. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Contract No. DE-AC02 06CH11357