Engineering Coercivity of SrRuO<sub>3</sub> thin film by SrTiO<sub>3</sub> capping layer
ORAL
Abstract
Here, we reported our recent result on controlling HC of SRO ultrathin film by a SrTiO3 (STO) capping layer. The film was deposited by pulsed laser deposition. By controlling the thickness and growth oxygen partial pressure of STO capping layer, we can tune the HC of SRO films by an amplitude over 100%. Such an effective modulation of HC is highly related to the oxygen vacancies transferred from STO capping layer to SRO film.
[1] J. Matsuno et al., Sci. Adv. (2016)
[2] L. Wang et al., Nat. Mat. (2018)
–
Presenters
-
Eun Kyo Ko
Center for Correlated Electron Systems (CCES), Institute for Basic Science (IBS)
Authors
-
Eun Kyo Ko
Center for Correlated Electron Systems (CCES), Institute for Basic Science (IBS)
-
Junsik Mun
Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University
-
Han-Gyeol Lee
Center for Correlated Electron Systems (CCES), Institute for Basic Science (IBS)
-
Jinkwon Kim
Center for Correlated Electron Systems (CCES), Institute for Basic Science (IBS), Department of Physics and Astronomy, Seoul National University
-
Miyoung Kim
Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University
-
Lingfei Wang
Center for Correlated Electron Systems (CCES), Institute for Basic Science (IBS), Department of physics and astronomy, Seoul National University, Department of Physics and Astronomy, Seoul National University
-
Tae Won Noh
Center for Correlated Electron Systems (CCES), Institute for Basic Science (IBS), Department of physics and astronomy, Seoul National University, Department of Physics and Astronomy, Seoul National University