Tuning the electronic properties of the 4d transition metal oxide LaRhO<sub>3</sub>
ORAL
Abstract
Perovskite transition metal oxides exhibit various novel properties due to strong correlations among their d electrons. These correlation effects are well known in the 3d transition metal oxides, such as LaCoO3, where multiple spin states can be observed. Electronic correlations are expected to change as the transition metal is changed from a 3d element to a 4d element in the same column of the periodic table, for example changing from Co to Rh. To explore these changes, we grow epitaxial La1-xSrxRhO3 thin films with Sr concentrations as large as 50% using molecular beam epitaxy. Hall measurements show a sign change from hole-like conduction for low doping to electron-like conduction for a large doping level of x=0.3. Systematic changes in electronic structure as a function of doping are predicted by theory and may provide a basis for understanding electronic correlations in transition metal oxides.
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Presenters
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Juan Jiang
Yale University
Authors
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Juan Jiang
Yale University
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TaeKyun Lee
Yale University
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Sangjae Lee
Yale University
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Sohrab Ismail-Beigi
Yale University
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Frederick J Walker
Yale University, Department of Applied Physics, Center for Research on Interface Structures and Phenomena, Yale University
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Charles H Ahn
Yale University, Department of Applied Physics, Center for Research on Interface Structures and Phenomena, Yale University