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Resistive switching and filament formation in VO<sub>2</sub> vertical devices

ORAL

Abstract

Vanadium oxides exhibit electrically-triggered, volatile, resistive switching and provide a promising opportunity to mimic spiking neurons for neuromorphic computing. The control of the physical properties of these oxides is an important requirement to develop oxide electronics for future technology. However, a detailed understanding of the non-volatile filamentary formation in these Mott materials is still lacking. In this work, we investigated the mechanisms behind volatile and non-volatile resistive switching in electrically-driven VO2 vertical devices. By using electrical transport measurement and in-situ transmission electron microscopy, the metal-insulator transition properties of the conductive filament and its nanoscale lattice structure are studied. Our works address the important issues in resistive switching based neuromorphic technologies.

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Presenters

  • Minhan Lee

    Materials Science and Engineering, University of California-San Diego

Authors

  • Minhan Lee

    Materials Science and Engineering, University of California-San Diego

  • Shaobo Cheng

    Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Canadian Centre for Electron Microscopy and Department of Materials Science and Engineering, McMaster University

  • Javier del Valle

    University of California, San Diego, Center for Advanced Nanoscience, Department of Physics, University of California-San Diego, Department of Physics, University of California San Diego, UCSD

  • Yimei Zhu

    Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Brookhaven National Laboratory, Brookhaven National Lab, Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Department of Energy Science and Technology, Brookhaven National Laboratory

  • Ivan Schuller

    University of California, San Diego, Department of Physics, University of California San Diego, Center for Advanced Nanoscience, Department of Physics, University of California-San Diego