APS Logo

Nonlinear planar Hall effect

ORAL

Abstract

An intriguing property of a three-dimensional topological insulator (TI) is the existence of surface states with spin-momentum locking. We report the discovery of a new type of Hall effect in a TI Bi2Se3 film [1]. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a π/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of π/4 between the linear planar Hall and anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry-breaking, which also exists in other non-centrosymmetric materials [e.g., WTe2 and the 2DEG on the SrTiO3(001) surface] with a large span of magnitude.

[1] P. He et al., Phys. Rev. Lett., 123, 016801(2019).

Presenters

  • Shulei Zhang

    Materials Science Division, Argonne National Laboratory, Argonne National Laboratory, Materials Science Division, Argonne National Lab, Department of Physics, Case Western Reserve University

Authors

  • Pan He

    Department of Electrical and Computer Engineering, National University of Singapore, Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore

  • Shulei Zhang

    Materials Science Division, Argonne National Laboratory, Argonne National Laboratory, Materials Science Division, Argonne National Lab, Department of Physics, Case Western Reserve University

  • Dapeng Zhu

    Department of Electrical and Computer Engineering, National University of Singapore, Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore

  • Shuyuan Shi

    Department of Electrical and Computer Engineering, National University of Singapore, Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore

  • Olle Heinonen

    Materials Science Division, Argonne National Lab, Argonne National Laboratory, Materials Science Division, Argonne National Laboratory, Argonne Natl Lab

  • Giovanni Vignale

    Department of Physics and Astronomy, University of Missouri, Department of Physics and Astronomy, Univ of Missouri - Columbia, Univ of Missouri - Columbia

  • Hyunsoo Yang

    Department of Electrical and Computer Engineering, National University of Singapore, Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, National University of Singapore