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Nonlinear planar Hall effect

Invited

Abstract

An intriguing property of a three-dimensional (3D) topological insulator is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D topological insulator Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a π/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of π/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of non-centrosymmetric materials with a large span of magnitudes. This provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.

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Presenters

  • Giovanni Vignale

    Department of Physics and Astronomy, University of Missouri, Department of Physics and Astronomy, Univ of Missouri - Columbia, Univ of Missouri - Columbia

Authors

  • Giovanni Vignale

    Department of Physics and Astronomy, University of Missouri, Department of Physics and Astronomy, Univ of Missouri - Columbia, Univ of Missouri - Columbia

  • Pan He

    Department of Electrical and Computer Engineering, National University of Singapore, Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore

  • Dapeng Zhu

    Department of Electrical and Computer Engineering, National University of Singapore, Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore

  • Shuyuan Shi

    Department of Electrical and Computer Engineering, National University of Singapore, Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore

  • Hyunsoo Yang

    Department of Electrical and Computer Engineering, National University of Singapore, Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, National University of Singapore

  • Steven S -L Zhang

    case western reserve university, Department of Physics, Case Western University

  • Olle Heinonen

    Materials Science Division, Argonne National Lab, Argonne National Laboratory, Materials Science Division, Argonne National Laboratory, Argonne Natl Lab