Solid-state defect based quantum modules

The development of technology required for quantum modules is likely to form the basis of any large-scale quantum information processing device. The question of the appropriate physical implementation of such technology remains, however, unsettled. In this presentation, we compare and contrast a number of different solid-state defects – including the nitrogen-, silicon-, and germanium-vacancy centers in diamond, as well as a variety of defects in silicon carbide – according to their suitability for quantum modules based on strong coupling to optical cavities. The primary aspects forming the basis of this comparison are Hilbert space size and connectivity, optical transition contrast and branching ratios, decay lifetimes, and the capability for robust information storage across multiple failed probabilistic optical operations. Our results show several promising candidates.