Field emission characteristics of solid-state, GaN-based vacuum nanoelectronic devices

Vacuum nanoelectronics have notable advantages over conventional solid state devices. Vacuum channel devices are inherently robust in harsh environments and allow high frequency and power operation due to ballistic electron conduction. By shrinking the vacuum channel to nanoscale size well below the electron mean free path in air, these devices should be operable in air while maintaining the advantages of vacuum transport. Here we propose GaN as a superior materials platform compared to silicon or metals for solid-state, nanogap field emission devices based on its lower electron affinity, higher chemical stability, and high breakdown voltage. These novel GaN nanogap field emission device exhibit low turn-on voltage, high field emission current, and excellent on-off ratio. We will present experimental and modeling results on the field emission characteristics of these devices at various gap sizes and operating pressures.