Epitaxial growth of cubic WC<i><sub>y</sub></i>(001) thin films
ORAL
Abstract
Tungsten carbide films were sputter-deposited onto MgO(001) substrates at 400 °C in 5 mTorr Ar-CH4 gas mixtures as a function of the CH4 fraction fCH4= 0.4 - 6%. High resolution transmission electron microscopy (TEM) and x-ray diffraction ω-2θ scans, ω-rocking curves, and reciprocal space maps on d = 10 nm thick layers indicate epitaxial growth of rock-salt WCy with a cube-on-cube epitaxial relationship: (001)WC || (001)MgO and [100]WC || [100]MgO. The measured out-of-plane coherence length matches the film thickness for d = 10 nm but remains nearly unaffected by a 60-fold increase in layer thickness to d = 600 nm. This suggests a critical thickness for epitaxial breakdown of ~ 10 nm, associated with the nucleation of misoriented grains as also observed by TEM. The relaxed lattice constant increases monotonically from 0.419 to 0.425 nm with increasing fCH4. Comparing these measured lattice parameters with first-principle predictions indicates a C-to-W ratio y = 0.47 - 0.68. However, composition measurements using energy-dispersive x-ray spectroscopy and Rutherford backscattering spectrometry yield measured C-to-W ratios of 0.57-1.25, suggesting that a considerable fraction (18 – 46 %) of C does not incorporate in the cubic phase but likely forms amorphous carbon.
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Presenters
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Peijiao Fang
Rensselaer Polytechnic Institute
Authors
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Peijiao Fang
Rensselaer Polytechnic Institute
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Baiwei Wang
Rensselaer Polytechnic Institute, Department of Materials Science and Engineering, Rensselaer Polytechnic Institute
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Christopher Mulligan
Benét Laboratories
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Thomas Murray
SUNY Polytechnic Institute
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Sanjay V. Khare
University of Toledo, Department of Physics and Astronomy, The University of Toledo
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Daniel Gall
Rensselaer Polytechnic Institute, Department of Materials Science and Engineering, Rensselaer Polytechnic Institute