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Pressure-induced metal-insulator transition in degenerately doped ferroelectrics

ORAL

Abstract


We perform first-principles calculations to study oxygen vacancies in two important types of ferroelectric oxides (LiNbO3 as the prototype of R3c-type ferroelectrics and BaTiO3 as the prototype of perovskite-type ferroelectrics). Under ambient conditions, with a low concentration of oxygen vacancies, both LiNbO3-δ and BaTiO3-δ become metallic; the polar distortions are reduced in both compounds but do not disappear. However, under pressures, the polar distortions in BaTiO3-δ are completely suppressed and the system remains metallic with itinerant electron uniformly distributed on Ti atoms. By contrast, the polar distortions in LiNbO3-δ increase under pressures and above a critical pressure, the system turns into an insulating state. The increased polar displacements in LiNbO3-δ reduce the band width even though the overall volume decreases under pressures, which localizes the itinerant electrons onto a defect state and eventually leads to a metal-insulator transition.

Presenters

  • Chengliang Xia

    The University of Hong Kong

Authors

  • Chengliang Xia

    The University of Hong Kong

  • Yue Chen

    The University of Hong Kong

  • Hanghui Chen

    New York University Shanghai, NYU-ECNU Institute of Physics, New York University Shanghai, Department of Physics, New York University Shanghai