Identification of select populations of single photon emitters in hexagonal boron nitride based on their zero phonon line and linewidth broadening footprint

Single photon emitters (SPE) in hexagonal boron nitride (hBN) have shown promising electrical and optical properties for utilization in quantum light source applications. The unpredictability of defect properties in hBN remains a significant challenge in order to reproducibly and more deterministically identify bright and robust emitters.
In this presentation, we first investigate the characteristics of zero phonon line spectra (ZPLs) from defects found in hBN samples fabricated by chemical vapor deposition techniques. Depending on the growth conditions, the ZPL distribution of defects from the same sample can be significantly reduced. This suggests that defects exhibiting similar properties might be identified. Based on these observations, we carry out an in-depth study of the spectral properties and emission line broadening mechanisms for different sets of defects showing similar spectral features. In particular, we perform both low temperature spectroscopy of photoluminescence down to 4K and luminescence decay lifetime measurements. Mechanisms of line broadening for the different populations of defects will be discussed. These elements build a better understanding of the zoology of defects in hBN and of their potential and limitations for quantum light applications.