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Transport Studies of Nanofabricated Tellurium Devices

ORAL

Abstract

Tellurium is a narrow bandgap semiconductor with high hole mobility of several hundred cm2(Vs)-1. It has attracted great interest due to its unique crystal structure, consisting of 1D helical chains interconnected by van der Waals type bonds. A recent development is the successful synthesis of two-dimensional tellurium, or tellurene, using a solution-based process. Various interesting transport phenomena have been experimentally demonstrated since then, such as anisotropic magnetoresistance, quantum Hall effect and gate-tuned insulator-metal transition, revealing its potential for fundamental studies and future applications of nanoscale devices. We discuss the fabrication and electrical measurements of few-layer and bulk tellurium flakes grown by the solution method. We study anisotropic and nanoscale transport of the material.

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Presenters

  • Xinxin Cai

    School of Physics and Astronomy, University of Minnesota

Authors

  • Xinxin Cai

    School of Physics and Astronomy, University of Minnesota

  • Chenyu Yu

    School of Physics and Astronomy, University of Minnesota

  • Prafful Golani

    Department of Electrical and Computer Engineering, University of Minnesota

  • Yan Wang

    Department of Chemical Engineering and Materials Science, University of Minnesota

  • Xinglong Ren

    Department of Chemical Engineering and Materials Science, University of Minnesota

  • Steven J. Koester

    Department of Electrical and Computer Engineering, University of Minnesota

  • C. Daniel Frisbie

    University of Minnesota, Department of Chemical Engineering and Materials Science, University of Minnesota

  • Vlad S. Pribiag

    School of Physics and Astronomy, University of Minnesota