Magnetism tunability in wafer-scale few-layered van der Waals ferromagnetic Fe<sub>3</sub>GeTe<sub>2 </sub>films
ORAL
Abstract
Two-dimensional (2D) ferromagnetic materials have been discovered with tunable magnetism and nodal-line properties. 2D magnetism modulation in exfoliated nanoflakes via electrostatic gating introduces the boosted TC. One of the most intriguing challenges, however, is still the realization of high TC materials that are tunable, robust. Here, we report the effective manipulation of magnetic properties of wafer-scale 2D ferromagnetic Fe3GeTe2 films by changing the sample composition and utilizing the proximity effect in ferromagnetic/antiferromagnetic heterostructures. With the film thickness decreasing, TC drops continuously from 220 K (bulk-like) down to 130 K (few-layer). By varying the sample compositions, TC will monotonously increase as the ratio changing. TC behaves a rising trend as the ferromagnetic/antiferromagnetic heterostructure period increases. Our experiments have confirmed the room-temperature TC and the phase transition, which are consistent with the DFT calculations. The large-scale high-TC film growth and controllable ferromagnetism of Fe3GeTe2 promise the practical spintronic applications. It also opens unprecedented opportunities to explore rich physics in heterostructures of van der Waals ferromagnets with 2D superconductors and topological materials.
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Presenters
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Shanshan Liu
Department of Physics, Fudan Univ, Fudan Univ
Authors
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Shanshan Liu
Department of Physics, Fudan Univ, Fudan Univ
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ke yang
Department of physics, fudan university, Department of Physics, Fudan Univ
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Zihan Li
Department of Physics, Fudan Univ
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Wenqing Liu
Department of Electronic Engineering, Royal Holloway University of London
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Enze Zhang
Department of Physics, Fudan Univ, Fudan Univ
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hua wu
Department of Physics, Fudan Univ
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Faxian Xiu
Fudan Univ, Department of Physics, Fudan Univ, Department of Physics, Fudan University, Physics, Fudan University