Low and high field transport in 2-dimensional electron gas in β-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterostructures

β-Ga₂O₃ is an emerging wide-bandgap semiconductor for potential application in power and RF electronics. The 2-dimensional electron gas (2-DEG) in β-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterostructures show the promise for high speed transistors. We will present both the low- and high- field 2-DEG transport properties in the AlGa₂O₃/Ga₂O₃ heterostructure. A self-consistent Poisson-Schrodinger simulation of heterostructure is used to obtain the subband energies and wavefunctions. Intra-subband, inter-subband, 2D-3D, 3D-2D and 3D-3D scattering rates are calculated for all the different scattering mechanisms. The electronic structure, assuming confinement in a particular direction, and the phonon dispersion is calculated based on first principle methods under DFT and DFPT framework. Phonon confinement is not considered for the sake of simplicity. The different scattering mechanisms that are included in the calculation are phonon (polar and non-polar), remote impurity, alloy and interface-roughness. We include the full dynamic screening in polar optical phonon scattering. We will use Full Band Monte Carlo to calculate the velocity-field profile in different crystal directions. We will also report the low field mobility by solving the Boltzmann transport equation using Rode’s iterative method.