Probing topological defect formation in a quantum annealer
ORAL
Abstract
References:
[1] A. del Campo, Phys. Rev. Lett. 121, 200601 (2018)
[2] Jin-Ming Cui, F. J. Gómez-Ruiz, Yun-Feng Huang, Chuan-Feng Li, Guang-Can Guo, A. del Campo, arXiv:1903.02145
[3] Y. Bando et al, TBS (2019)
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Presenters
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Adolfo Del Campo
Physics, Donostia International Physics Center, 2. Donostia International Physics Center, E-20018 San Sebastián, Spain, Donostia International Physics Center (DIPC), University of Massachusetts Boston
Authors
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Yuki Bando
Tokyo Institute of Technology, Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
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Fernando J. Gómez-Ruiz
2. Donostia International Physics Center, E-20018 San Sebastián, Spain
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Masayuki Ohzeki
3. Tohoku University, Sendai 980-8579, Japan
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Hiroki Oshiyama
3. Tohoku University, Sendai 980-8579, Japan
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Naokazu Shibata
3. Tohoku University, Sendai 980-8579, Japan
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Yuki Susa
Tokyo Institute of Technology, Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
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Sei Suzuki
4. Saitama Medical University, Moroyama, Saitama 350-0495, Japan
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Daniel A Lidar
University of Southern California, Univ of Southern California, 5. University of Southern California, Los Angeles, California 90089, USA
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Adolfo Del Campo
Physics, Donostia International Physics Center, 2. Donostia International Physics Center, E-20018 San Sebastián, Spain, Donostia International Physics Center (DIPC), University of Massachusetts Boston
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Hidetoshi Nishimori
Tokyo Institute of Technology, Tokyo Institute of Technology, Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan