Development of a CVD assisted PLD system for growing atomic monolayers

The fundamental step for development of semiconductors involves stacking of layers of thin films of materials with desired properties on a particular substrate. PLD is a technique employed for growing thin films using laser ablation of a target material. CVD is an alternate method used to deposit solid materials from a gaseous phase. However, combining these two techniques can enhance plume, gas and laser interaction to facilitate the growth of novel materials with new properties. Conformity and purity play pivotal roles in the thin film growth process. While working under Ultra-high vaccum can eliminate impurities, on the other hand, proper screening and thermal activation of the plasma of ablated materials ensures a smooth registration of the film with the substrate. In order to control the ratio of CVD to PLD action, we use an optical chopper. We also aim at studying the effect of substrate, temperature and carrier gas on the resulting film. For analysis and characterization of the developed film, we employ standard techniques like SEM, XRD, Raman spectroscopy, fluorescence and profilometry. For initial proof of concept, we demonstrate growing a metal nitride.