Growth and electrical transport properties of (110) YBa₂Cu₃O₇ / (110) PrBa₂(Cu_0.8Ga_0.2)₃O₇heterostructure

We performed pulsed laser-based thin film deposition and study of electrical transport properties on (110)-oriented YBa₂Cu₃O₇ (YBCO)/ (110)-oriented PrBa₂(Cu_0.8Ga_0.2)₃O₇ heterostructure for the nanofabrication of Superconductor (S) / Insulator (I) / Superconductor (S) tunneling Josephson junction device which may have many advantages over the conventional low-temperature superconductor-based Josephson junction devices including low cost, cryogenic system simplicity, and high I_cR_n product (with I_c being the junction critical current and R_n the normal resistance). X-ray diffraction pattern (XRD) analysis, atomic force microscopy (AFM), and electrical transport studies were carried out to check the orientation, thickness, roughness, surface morphology, critical temperature (T_C), and electrical resistivities of the heterostructures. Here, we report the optimization process for the layer by layer growth, multi-layer epitaxy, thickness control of the superconductor and insulator layers, and the electrical transport properties of the (110) YBa₂Cu₃O₇ / (110) PrBa₂(Cu_0.8Ga_0.2)₃O₇ heterostructure.