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Efficient intrinsic spin-to-charge current conversion in an all-epitaxial single-crystal perovskite-oxide heterostructure of La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub>/LaAlO<sub>3</sub>/SrTiO<sub>3</sub>

ORAL

Abstract

The two-dimensional electron gas formed at the interface between insulating perovskite oxides LaAlO3 (LAO) and SrTiO3 (STO) is promising for efficient spin-charge conversion, so-called the (inverse) Edelstein effect (EE). A giant (inverse) EE has been observed in multilayer structures composed of a polycrystalline ferromagnetic layer and LAO/STO; however, the reported temperature dependences of the (inverse) EE are significantly different from each other, and unified understanding of its real mechanism is still lacking. Here, we demonstrate efficient intrinsic spin-to-charge current conversion in an all-epitaxial single-crystal heterostructure of La0.67Sr0.33MnO3/LAO/STO, which can suppress spin scattering and give us an ideal environment to investigate intrinsic spin-charge conversion. With decreasing temperature to 20 K, the spin-to-charge current conversion efficiency is drastically enhanced to +6.7 nm, which is the largest value among those reported for LAO/STO. Our band-structure calculation well reproduces this behavior and predicts further enhancement by controlling the Fermi level position [1].
[1] S. Ohya et al., arXiv:1906.06016.

Presenters

  • Shinobu Ohya

    Univ of Tokyo, Department of Electrical Engineering and Information Systems, The University of Tokyo, Institute of Engineering Innovation, The University of Tokyo

Authors

  • Shinobu Ohya

    Univ of Tokyo, Department of Electrical Engineering and Information Systems, The University of Tokyo, Institute of Engineering Innovation, The University of Tokyo

  • Daisei Araki

    Univ of Tokyo, Department of Electrical Engineering and Information Systems, The University of Tokyo

  • Le Duc Anh

    Univ of Tokyo, Department of Electrical Engineering and Information Systems, The University of Tokyo, Institute of Engineering Innovation, The University of Tokyo

  • Shingo Kaneta

    Department of Electrical Engineering and Information Systems, The University of Tokyo

  • Munetoshi Seki

    Univ of Tokyo, Department of Electrical Engineering and Information Systems, The University of Tokyo

  • Hitoshi Tabata

    Univ of Tokyo, Department of Electrical Engineering and Information Systems, The University of Tokyo

  • Masaaki Tanaka

    Univ of Tokyo, Department of Electrical Engineering and Information Systems, The University of Tokyo