Photo-induced current enhancement in core-shell type quantum dot FET

Low dimensional materials are promising candidates to provide unique electronic properties; among them, quantum dots (QDs) and their hybrid systems are considered highly feasible because of the tunability of physical and chemical properties by material design. Here we report the fabrication of CdSe/CdS core-shell QDs-based field effect transistors (FETs) and its application to photo FET operations under UV light irradiation. The thin films of CdSe/CdS QDs were fabricated on SiO2/Si substrates in order to perform field effect experiments. The UV light irradiation dramatically changed the transfer characteristics for the thin films, the thickness of which ranges from ~20 nm to ~200 nm. We will discuss the thickness and the gate voltage dependence of the photo-induced current enhancement in the core-shell QDs-based FET in detail.