Complementary logic inverters based on polarity-controllable MoS₂ fin-shaped and v-shaped field effect transistors

Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation electronics. In this work, we show a well-mannered growth of MoS₂ between two electrodes on silicon oxide with fin-shaped and v-shaped structure. In the fin-shaped case, both n-type and p-type MoS₂ can be integrated by using a traditional implantation technique. In the v-shaped case, the device can alternately operate either as a p-type or an n-type semiconductor in the identical one. The proposed device is built with an adjustable threshold voltage (V_th), which can be varied by adding a layer of plasma-oxidized dielectric at the top gate structure. Consequently, the V_th shifts and the top gate structure switch from the typical n-type to p-type while n-type behaviour remains in the application of bottom-gate voltages. In both cases, we have accordingly demonstrated the complementary logic inverters based on the polarity-controllable behavior. Our results provide evidence for complementary 2D materials operation in the same materials, a promising avenue for the development of high-density complementary 2D electronic devices.