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Visible quantum dot light-emitting diodes with simultaneous high brightness and efficiency

ORAL

Abstract

Quantum dot light-emitting diodes are promising light sources for applications in displays. However, to date, there have been no reports of devices that simultaneously offer both high brightness and high external quantum efficiency. Here, we report red, green and blue quantum dot light-emitting diodes based on CdSe/ZnSe core/shell structures that have these attributes1. We demonstrate devices with maximum external quantum efficiencies of 21.6%, 22.9% and 8.05% for red, green and blue colours with corresponding brightness of 13,300 cd m–2, 52,500 cd m–2 and 10,100 cd m–2. The devices also offer peak luminance of 356,000 cd m–2, 614,000 cd m–2 and 62,600 cd m–2, respectively. We postulate that this high performance is due to the use of Se throughout the core/shell regions and the existence of alloyed bridging layers at the core/shell interfaces. This study suggests that in the future visible quantum dot light-emitting diodes will also be suitable for lighting applications.

1. H. B. Shen, Q. Gao, Y. B. Zhang, Y. Lin, Q. L. Lin, Z. H. Li, L. Chen, Z. P. Zeng, X. G. Li, Y. Jia, S. J. Wang, Z. L. Du, L. S. Li, and Z. Y. Zhang, Nature Photon. 13, 192 (2019).

Presenters

  • Zhenyu Zhang

    University of Science and Technology of China, Hefei 230026, China, ICQD, University of Science and Technology of China, University of Science and Technology of China, Hefei, China

Authors

  • Huaibin Shen

    Henan University, Kaifeng, China

  • Qiang Gao

    University of Science and Technology of China, Hefei, China

  • Yanbin Zhang

    Henan University, Kaifeng, China

  • Yue Lin

    University of Science and Technology of China, Hefei, China

  • Qingli Lin

    Henan University, Kaifeng, China

  • Zhaohan Li

    Henan University, Kaifeng, China

  • Ling Chen

    Henan University, Kaifeng, China

  • Zaiping Zeng

    Henan University, Kaifeng, China

  • Xiaoguang Li

    Shenzhen University, Shenzhen, China

  • Yu Jia

    Zhengzhou University, Zhengzhou 450001, China, Henan University, Kaifeng, China, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China

  • Shujie Wang

    Henan University, Kaifeng, China

  • Zuliang Du

    Henan University, Kaifeng, China

  • Lin Song Li

    Henan University, Kaifeng, China

  • Zhenyu Zhang

    University of Science and Technology of China, Hefei 230026, China, ICQD, University of Science and Technology of China, University of Science and Technology of China, Hefei, China