Noise-resilient driven exchange gate for quantum dot spin qubits
ORAL
Abstract
Spin qubits in silicon quantum dots are a promising candidate for high-fidelity quantum computation due to long decoherence times and fast operations.
Demonstrations of single qubit gates with fidelities up to 99.9% have been shown [1,2].
Recent demonstrations of two-qubit gates show fidelities of 92-98% [2,3]. These two-qubit gate implementations are not robust against low-frequency charge noise, which couples in via the exchange interaction, causing a limited fidelity. We propose a simple yet effective scheme that is resilient against low-frequency charge noise. We use a combination of analytic calculations and numerical simulations under realistic conditions to obtain estimated gate fidelities greater than 99%, which allow for fault-tolerant two qubit gates. We directly compare these realizations with existing proposals and will present our experimental efforts towards achieving this goal.
[1] Yoneda et al., Nat. Nanotechnol. 13, 102 (2018)
[2] Huang et al., Nature (London) 569, 532 (2019)
[3] Xu et al., Phys. Rev. X 9, 021011 (2019)
Demonstrations of single qubit gates with fidelities up to 99.9% have been shown [1,2].
Recent demonstrations of two-qubit gates show fidelities of 92-98% [2,3]. These two-qubit gate implementations are not robust against low-frequency charge noise, which couples in via the exchange interaction, causing a limited fidelity. We propose a simple yet effective scheme that is resilient against low-frequency charge noise. We use a combination of analytic calculations and numerical simulations under realistic conditions to obtain estimated gate fidelities greater than 99%, which allow for fault-tolerant two qubit gates. We directly compare these realizations with existing proposals and will present our experimental efforts towards achieving this goal.
[1] Yoneda et al., Nat. Nanotechnol. 13, 102 (2018)
[2] Huang et al., Nature (London) 569, 532 (2019)
[3] Xu et al., Phys. Rev. X 9, 021011 (2019)
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Presenters
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Stephan Philips
Delft University of Technology
Authors
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Stephan Philips
Delft University of Technology
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Maximilian Russ
Delft University of Technology
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Lieven M Vandersypen
QuTech and Kavli Institute of Nanoscience, TU Delft, The Netherlands, QuTech and Kavli Institute of Nanoscience, QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft University of Technology, Delft University of Technology, Delft, The Netherlands