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Charge Engineering in Nickelate-based Mott Transistors Gated by Ferroelectrics

ORAL

Abstract

We present a comprehensive study of ferroelectric-gated Mott transistors based on high quality epitaxial heterostructures composed of a ferroelectric Pb(Zr,Ti)O3 (PZT) gate and a correlated oxide RNiO3 (R = La, Nd, Sm) channel. For single layer nickelate channels, including Sm0.5Nd0.5NiO3, NdNiO3 (NNO), and LaNiO3 (LNO), the resistance switching ratio ΔR/Ron increases exponentially with decreasing channel thickness until it approaches the electrical dead layer thickness, with the maximum ΔR/Ron~194% observed in 1 nm LNO channel. Inserting a La1-xSrxMnO3 (LSMO) buffer layer results in up to two orders of magnitude increase in ΔR/Ron for devices with the same total channel thickness, with the maximum ΔR/Ron reaching 1,225% in the NNO/LSMO channel. The giant enhancement is attributed to the interfacial charge transfer effect between RNiO3 and LSMO, which effectively reduces the carrier density in the active channel. Our studies address the key materials challenges that limit the application potential of epitaxial complex oxide-based field effect transistors.

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Presenters

  • Yifei Hao

    University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln

Authors

  • Yifei Hao

    University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln

  • Xuegang Chen

    Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln

  • Le Zhang

    Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln

  • Xia Hong

    University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center of Materials and Nanoscience, University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln