Spin relaxation in InSe probed by time-resolved Kerr rotation

Two dimensional materials have shown much promise as a platform for novel optical and spin based devices.Recently, van der Waals layers of group-III monochalcogenide Indium Selenide (InSe) have attracted much attention because of their high electron mobility, strong second harmonic generation, and layered-dependent direct band gap. While these optical and electrical properties have been experimentally demonstrated, spin properties of InSe are still poorly understood despite intriguing predictions of layer-dependent optical spin selection rules. Here, we present measurements of spin relaxation in InSe using time-resolved Kerr rotation in the near infrared spectrum. These results will contribute to evaluating spin properties of the high-mobility carries in InSe.