Density Functional Theory Calculations of Al doped Hafnia for Different Crystal Symmetry Configurations
ORAL
Abstract
Thin films of Hf based oxides gained importance after the discovery of the ferroelectricity in these materials1. One of the ways to achieve ferroelectricity in HfO2 is doping with metals such as Zr and Al to modify the crystal structure towards orthorhombic symmetry. In Hf based oxide thin films prepared by doping, multiple crystal phases could emerge. In this work, we theoretically investigated the stability of the possible structures that could be present in Al doped HfO2 using quantum mechanical methods. Specifically, using plane wave density functional theory, the monoclinic, tetragonal, orthorhombic, and rhombohedral phases of aluminum doped hafnia were geometrically optimized. The resulting equilibrium structures for 3%, 6%, and 7% Al doped hafnia structures will be used as theoretical reference structures for EXAFS spectra obtained Al doped HfO2 thin films.
Keywords: Density functional theory, ferroelectricity, doped hafnia
1T. S. Boscke, J. Muller, D. Brauhaus, U. Schroder, and U. Bottger, Appl. Phys. Lett. 99, 102903 (2011).
Keywords: Density functional theory, ferroelectricity, doped hafnia
1T. S. Boscke, J. Muller, D. Brauhaus, U. Schroder, and U. Bottger, Appl. Phys. Lett. 99, 102903 (2011).
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Presenters
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Joshua Steier
Physics, Seton Hall University
Authors
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Joshua Steier
Physics, Seton Hall University
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Mehmet Alper Sahiner
Physics, Seton Hall University, Seton Hall Univ
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Rory J Vander Valk
Center for Computational Research, Chemistry and Biochemistry, Seton Hall University
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Jared Savastano
Physics, Seton Hall University
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Stephen Kelty
Center for Computational Research, Chemistry and Biochemistry, Seton Hall University