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Density Functional Theory Calculations of Al doped Hafnia for Different Crystal Symmetry Configurations

ORAL

Abstract

Thin films of Hf based oxides gained importance after the discovery of the ferroelectricity in these materials1. One of the ways to achieve ferroelectricity in HfO2 is doping with metals such as Zr and Al to modify the crystal structure towards orthorhombic symmetry. In Hf based oxide thin films prepared by doping, multiple crystal phases could emerge. In this work, we theoretically investigated the stability of the possible structures that could be present in Al doped HfO2 using quantum mechanical methods. Specifically, using plane wave density functional theory, the monoclinic, tetragonal, orthorhombic, and rhombohedral phases of aluminum doped hafnia were geometrically optimized. The resulting equilibrium structures for 3%, 6%, and 7% Al doped hafnia structures will be used as theoretical reference structures for EXAFS spectra obtained Al doped HfO2 thin films.

Keywords: Density functional theory, ferroelectricity, doped hafnia

1T. S. Boscke, J. Muller, D. Brauhaus, U. Schroder, and U. Bottger, Appl. Phys. Lett. 99, 102903 (2011).

Presenters

  • Joshua Steier

    Physics, Seton Hall University

Authors

  • Joshua Steier

    Physics, Seton Hall University

  • Mehmet Alper Sahiner

    Physics, Seton Hall University, Seton Hall Univ

  • Rory J Vander Valk

    Center for Computational Research, Chemistry and Biochemistry, Seton Hall University

  • Jared Savastano

    Physics, Seton Hall University

  • Stephen Kelty

    Center for Computational Research, Chemistry and Biochemistry, Seton Hall University