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Nano-lasing from Zn-doped GaAs nanowires on Iron (Fe) substrate

POSTER

Abstract

We investigated optically pumped lasing from highly zinc-doped GaAs nanowires (NWs) on an iron (Fe) substrate at 5 K cryostat temperature. The conically shaped GaAs NWs possess an 8 nm thick Al2O3 layer around it to reduce Schottky band-banding. The NWs were optically excited with 150 fs laser pulses generated from Ti-Sapphire centered at a wavelength of 720 nm. The lasing output versus excitation power (L-L) of the lasing NWs shows the characteristic S shaped curve. Lasing NWs on Fe have a length of more than 4 µm with tip and base diameters of ~300 and~500 nm, respectively. Shorter NWs did not provide sufficient modal gain to exceed the plasmonic losses in the Fe film. The emission spectrum reveals two or three longitudinal modes, which resonate within the gain spectrum. The threshold power for NW lasers on Fe substrate were higher than for NWs on Au or glass due to significantly higher losses in the Fe film. FDTD simulations reveal that the hybrid plasmonic mode of lasing NWs on Fe has a predominantly photonic character. In a further step, we will investigate if an applied magnetic field influences the lasing behavior in GaAs NWs on Fe substrate.

Presenters

  • Gyanan Aman

    Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45221, U.S.A

Authors

  • Gyanan Aman

    Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45221, U.S.A

  • ChiaWei Tu

    Department of Physics, Univ of Cincinnati, Department of Physics, University of Cincinnati, Cincinnati, OH 45221, U.S.A

  • Mykhaylo Lysevych

    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia

  • Hoe Tan

    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia

  • Chennupati Jagadish

    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia

  • Heidrun Schmitzer

    Department of Physics, Xavier University, Department of Physics, Xavier University, Cincinnati, OH 45207

  • Martin Fraenzl

    Department of Physics, University of Leipzig, Department of Physics, University of Leipzig, 04103 Leipzig, Germany

  • Marc Cahay

    Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45221, U.S.A

  • Hans Peter Wagner

    Department of Physics, University of Cincinnati, Cincinnati, OH 45221, U.S.A