Polariton Optical Transistor based on a MoSe₂-WS₂ Heterogenous Bilayer embedded in an Optical Microcavity at Room Temperature

Exciton polaritons in an optical microcavity were shown to be a platform for the design of working elements for optical transfer and processing circuits such as optical transistors and switches. In this report, we considered a three-way superposition of cavity photons, direct excitons and indirect excitons in a bilayer semiconducting system; that is, exciton dipolaritons. Using the forced diffusion equation, we studied the room-temperature dynamics of dipolaritons in a transition-metal dichalcogenide (TMD) heterogeneous bilayer embedded in an optical microcavity. Specifically, we considered a MoSe₂-WS₂ heterostructure, which encompasses Y and Ψ-shaped channels guiding the dipolariton propagation. We demonstrated that optical signals propagating in the channels can be effectively redistributed between the branches of the channels by applying the driving voltage ~2V/mm to one of the TMD layers. Our findings open the route to the design of an efficient room temperature polariton based optical transistor.