Study of Tunneling Magnetoresistance (TMR) in Twisted CrBr₃ Bilayers

The recent discovery of two-dimensional (2D) magnetic materials (such as CrI₃ and Cr₂Ge₂Te₆₎ has opened new opportunities for novel electronics and spintronics ^[1][2]. By controlling the stacking angle between two monolayers, the twisted 2D bilayers have shown novel quantum states, such as unconventional superconductivity and ferromagnetism^[3][4]. However, whether the magnetic ground states of twisted 2D magnetic bilayers can be tuned by the twisting angle is still an open question. In this work, we fabricated h-BN/Graphene/twisted CrBr₃ bilayer/Graphene/h-BN devices using a dry-transfer technique with the twisting angle well controlled. The tunneling magnetoresistances of the twisted CrBr3 devices with different twisting angles will be measured at different temperatures and magnetic fields. We are aiming to establish a phase diagram of the magnetic ground states in the twisted CrBr3 bilayers as a function of the twisting angle. Our study may pave a new way for manipulating magnetic orders in 2D magnetic materials and offer new opportunities in designing 2D material-based spin devices.
[1] B. Huang et al, Nature 546, 270-273 (2017)
[2] C. Gong et al, Nature 546, 265-269 (2017)
[3] Y. Cao et al. Nature 556, 43-50 (2018)
[4] A. Sharpe et al, Science 365, 605-608 (2019)