Magnetic and Electronic Materials towards Realization of a FET based on Spin-Orbit Torques

The spin-orbit torque field effect transistor (SOTFET) is a recently proposed device that combines the spin-orbit-torque mechanism for writing magnetic memories with semiconductor transistors that are ubiquitous in logic. The SOTFET utilizes a magnetoelectric multiferroic to couple a SOT-controlled ferromagnet to the semiconducting channel. Therefore, this magnetic device may access the orders-of-magnitude on/off ratio of transistors, giving it the potential to combine memory and logic. It’s realization, however, relies on the delicate interplay between topological insulating, ferro/ferrimagnetic, multiferroic, and semiconducting materials. In this talk, we discuss the material parameters and candidates that show promise for integration into a SOTFET and give an overview of the material advances towards realizing the device.