Electronic transport properties of doped Bi₂X₃(X = Se, Te) single crystals Shailja Sharma, C.S. Yadav <i>School of Basic Sciences, Indian Institute of Technology Mandi-175005 (H.P.) India</i>

The obervation of anomalous Hall effect and the occurrence of superconductivity in doped 3D topological insulators, are some of the very interesting phenomenon in these systems [1-3]. We have investigated the magneto-transport properties of Bi₂Se₃ and Bi₂Te₃ single crystals to explore the effect of intercalation and substitution of Fe, Ag, Au, Pt, Pd etc. on the electronic state of the systems. Magnetoresistance of the magnetically doped Bi₂Se₃ was found to follows Kohler’s rule, suggesting the single scattering rate at all the points on the Fermi surface. Hall effect measurements suggest the consistence doping of charge carriers in the system upon intercalation. Our findings on the weak antilocalization and weak localization cusps in the magnetoresistance and their evolution with dopant concentration bring out the effect of charge transfer or magnetic elements on the topological surface states of these compounds [4].
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Shailja Sharma, C. S.Yadav, (Under preparation).