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Giant enhancement of critical current density at high field in superconducting (Li,Fe)OHFeSe films by Mn doping

POSTER

Abstract

Critical current density (Jc) is one of the major limiting factors for high-field applications of iron-based superconductors. Here, we report that Mn ions are successfully incorporated into nontoxic superconducting (Li,Fe)OHFeSe films. Remarkably, the Jc is significantly enhanced from 0.03 to 0.32MA cm−2 under 33 T, and the vortex pinning force density monotonically increases up to 106 GN m−3, which is the highest record so far among all iron-based superconductors. Our results demonstrate that Mn incorporation is an effective method to optimize the performance of (Li,Fe)OHFeSe films, offering a promising candidate for high-field applications.

Presenters

  • Dong Li

    Institute of Physics, Chinese Academy of Sciences

Authors

  • Dong Li

    Institute of Physics, Chinese Academy of Sciences

  • Jie Yuan

    Institute of Physics, Chinese Academy of Sciences

  • Peipei shen

    Institute of Physics, Chinese Academy of Sciences

  • Chuangying Xi

    High Magnetic Field Laboratory, Chinese Academy of Science

  • Jinpeng Tian

    Institute of Physics, Chinese Academy of Sciences

  • Shunli Ni

    Institute of Physics, Chinese Academy of Sciences

  • Jingsong Zhang

    Institute of Physics, Chinese Academy of Sciences

  • Zhongxu Wei

    Institute of Physics, Chinese Academy of Sciences

  • Wei Hu

    Institute of Physics, Chinese Academy of Sciences

  • Zian Li

    Institute of Physics, Chinese Academy of Sciences

  • Li Yu

    Institute of Physics, Chinese Academy of Sciences

  • Jun Miao

    School of Materials Science and Engineering, University of Science and Technology Beijing

  • Fang Zhou

    Institute of Physics, Chinese Academy of Sciences

  • Li Pi

    High Magnetic Field Laboratory, Chinese Academy of Science

  • Kui Jin

    Institute of Physics, Chinese Academy of Sciences

  • Xiaoli Dong

    Institute of Physics, Chinese Academy of Sciences

  • Zhongxian Zhao

    Institute of Physics, Chinese Academy of Sciences