Temperature influence in the broadening parameter of photoreflectance spectras on GaAs doped with Ge and Sn as aged samples
POSTER
Abstract
Aged samples of GaAs doped with Ge and Sn growth by liquid phase epitaxy, show temperature influence in the broadening parameter of the photoreflectance spectras domined mainly by the photon-defects interactions. The samples were characterized via Raman spectroscopy, X-ray diffraction technique and scanning electron microscopy. The photoreflectance spectras were taken by varying temperatures from 20 to 300 K. Optical measurements suggest that increase temperature and increases broadening parameter, exhibiting changes in the photon-defects interactions, possibly attributed to increase in aging defects.
Presenters
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Samuel Zambrano
University of Magdalena, University of Guajira
Authors
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Samuel Zambrano
University of Magdalena, University of Guajira
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Gerardo Fonthal
Doctoral Program in Physical Sciences, University of Quindio
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Jose Sierra
University of Magdalena
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John Prias
Optoelectronics, Universidad del Quindío, Doctoral Program in Physical Sciences, IIS and EITP, University of Quindio, Doctoral Program in Physical Sciences, University of Quindio, Doctoral Program in Physical Sciences, Interdisciplinary Institute of Sciences, University of Quindio, Physical Sciences Doctoral Program, Interdisciplinary Institute of Sciences, University of Quindio