Electronic Structure Study of Halogen and Gold Halide Doped Carbon Nanotubes
POSTER
Abstract
Achieving high electrical conductivity of carbon nanotubes (CNTs) through doping will facilitate its application in power transmission cable and nanoelectronic interconnects. Here, we report extremely efficient p-doping of CNT using halogen and gold halide molecules. Using ab initio theoretical calculations based on density functional theory, we investigated the effect of dopants, such as I2 and AuCl3, on the electronic band structure of semiconducting and metallic CNTs. We found that both I2 and AuCl3 introduces states between the first Van Hove singularities of conduction and valance bands. I2 was reported being an efficient dopant for CNTs. From our calculations, we confirm that large Fermi level shift occurs for both I2 and AuCl3 doping. Though the Fermi shift is much larger for AuCl3 doping. Moreover, transmission function calculations reveal that a few fold increase in available quantum channels exists for AuCl3 doping compared to I2 doping. Therefore, gold halide such as AuCl3 can be a perfect candidate as a dopant molecule of CNTs to produce conductors with ultra-high conductivities.
Presenters
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Ahmed Zubair
Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology
Authors
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Md Latifur Rahman
Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology
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Md Hasibul Amin
Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology
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Ahmed Zubair
Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology