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Dipolar Magnetoexcitons in α-T<sub>3</sub> double layers in a high magnetic field

POSTER

Abstract

We consider two parallel α-T3 layers separated by an insulating slab (e.g. SiO2 or a hexagonal boron nitride (h-BN) insulating barrier) in a high magnetic field. The equilibrium system of local pairs of electrons and holes, spatially separated in these parallel α-T3 layers, correspondingly, can be created by varying the chemical potential using a bias voltage between two α-T3 layers or between two gates located near the corresponding α-T3 sheets (case 1) (for simplicity, we also call these equilibrium local e-h pairs as dipolar magnetoexcitons). In case 1 a dipolar magnetoexciton is formed by an electron on the Landau level 1 and hole on the Landau level −1. Dipolar magnetoexcitons with spatially separated electrons and holes can be created also by laser pumping (case 2) and by applying a perpendicular electric field. In case 2, a dipolar magnetoexciton is formed by an electron in the Landau level 1 and hole in the Landau level 0. We assume the system is in a quasi-equilibrium state. We study the collective properties and superfluidity of dipolar excitons in α-T3 double layers in a high magnetic field for both case 1 and case 2.

Presenters

  • Yonatan Abranyos

    Physics and Astronomy, Hunter College of CUNY

Authors

  • Yonatan Abranyos

    Physics and Astronomy, Hunter College of CUNY

  • Godfrey Gumbs

    Hunter college, CUNY, Hunter College of the City University of New York, Hunter college, Physics and Astronomy, Hunter college, Department of Physics & Astronomy, Hunter College-CUNY, New York, Physics and Astronomy, Hunter college,City University of New York, Department of Physics and Astronomy, Hunter College of the City University of New York, Physics and Astronomy, Hunter College of CUNY, Physics and Astronomy, Hunter College, City University of New York

  • Oleg Berman

    The Graduate Center, City University of New York, New York City College of Technology, Physics, New York City College of Technology