Fabrication of (Ga₂O₃)_x(Fe/Cr)_y(ZnSeTe /ZnSTe)_1-x-y film on quartz substrate

Mid-IR (MIR) band at ~3μm has attracted much attention for their wide applications in medical, biological, sensing technologies, etc. Ga₂O₃ is a wide band gap semiconductor material with fine electrical and luminescent properties, which has been widely used in photoelectric devices. Recently, an intriguing material (In₂O₃/Ga₂O₃)_0.1(Co)_0.5(ZnS/Se)_0.4 has been reported[1] that which owns better optical and transport properties than its parent phase of Ga₂O₃ and In₂O₃. According to Ref [1], the reason of doping Co was the rich absorption and emission levels, good infrared optical properties, and room temperature ferromagnetic (RT-FM) property. However, compared with Co, transition metal Fe and Cr have wider FWHM of absorption, emission and luminescence spectrum, and even Fe has stronger RT-FM property than Co. Moreover, the different chalcogenide elements substitution might induce abundant properties which has been already verified by many researches in correlated system[2]. Hereby, we synthesized (Ga₂O₃)_x(Fe/Cr)_y(ZnSeTe /ZnSTe)_1-x-y film onto quartz substrate and investigated the structure, optical and transport properties.

[1] Pan Y, Wang L, Gao D W, et al. Materials Research Express, 6 106441 (2019).
[2] A Subedi, L-J Zhang, D-J Singh et al., Phys. Rev. B, 78 134514 (2019).