Fabrization of giant piezoelectric material Sm-doped Pb(Mg_1/3Nb_2/3)O₃-PbTiO3 single crystal film

Sm-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (Sm-PMN-PT) single crystal was recently reported as a new piezoelectric material with the highest piezoelectric charge coefficients which will have great applications on transducers and sensors in electromechanics [1]. In previous research, the piezoelectric mechanism in the material is believed that the local structural heterogeneity of relaxor ferroelectric crystals caused by Rare-earth element. However, the research on the thin film of this material is still lack. For further investigate the piezoelectric properties of Sm-PMN-PT thim film, we explored the methods to grow Sm-PMN-PT film on different substrates, such as YAlO₃, MgAl₂O₄, MgO. Furthermore, we analyzed and compared the differences in the transport properties and crystal structure between Sm-PMN-PT layers deposited onto different substrates. According to the calculation in Ref. [1], La³⁺ and Nd³⁺ was considered substituting the Sm ions in our future work. This research will promote the development of advanced piezoelectric devices.

[1] Fei Li, MJ Cabral, B. Xu et al., Science, 364 264 (2019)