Transport characteristics of type II Weyl semimetal MoTe₂ thin films grown by chemical vapor deposition

Theoretical calculations and experimental observations show MoTe₂ is a type II Weyl semimetal, along with many members of transition metal chalcogenides family. We have grown highly crystalline large-area (upto 8mm X 4mm ) MoTe₂ thin films on Si/SiO₂ substrates by chemical vapor deposition. Very uniform, continuous, and smooth 1T'-MoTe₂ films were obtained as confirmed by scanning electron microscopy, atomic force microscopy, x-ray and Raman spectroscopy analyses. Measurements of the temperature dependence of longitudinal resistivity and current-voltage characteristic at different temperature are discussed. Unsaturated, positive quadratic magnetoresistance of the as-grown thin films has been observed at various temperatures below room temperature. Hall resistivity measurements confirm the majority charge carriers are holes. Using the single band model, carrier concentration was calculated to be 2.38 × 10²¹ holes cm^-3 at 10 K, which is semimetallic, and increasing with temperature. These results will guide us in the way of pragmatic applications of thin films MoTe₂ in future electronic devices.