One-phonon resonant Raman scattering in a nanowire in presence of an external electric field
POSTER
Abstract
In this work, the emission spectra for a one-phonon resonant Raman scattering process in a semiconductor nanowire of GaAs with a cylindrical symmetry in the presence of an external transversal and homogeneous electric field, as a mechanism for controlling the electron states and the selection rules due to confinement, are presented. The theoretical model considers single parabolic conduction and valence bands which are split into a sub-bands system due to confinement and electric field. We have considered Frölich type Hamiltonian for the electron-phonon interaction and only Stokes process, where the Comas-Trallero model for a free-standing wire has been used. Moreover, the electron intermediate states correspond to uncorrelated electron-hole pairs. As a result, the emission spectra corresponding to different laser energies and the selection rules for the process are discussed. The electric field produces the appearance of transitions linked to phonon oscillation modes where despite using dipole approximation in the electron-photon interaction.
Presenters
-
Maricela Fernández Lozada
Univ de Sonora
Authors
-
Maricela Fernández Lozada
Univ de Sonora
-
Ricardo Betancourt Riera
Fisica, Instituto Tecnológico de Hermosillo
-
René Betancourt Riera
Fisica, Instituto Tecnológico de Hermosillo
-
Raúl Riera Aroche
Univ de Sonora