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Gate-defined quantum dots in monolayer and bilayer WSe<sub>2</sub>: Part I, Fabrication

ORAL

Abstract

Gate-defined quantum dots in monolayer and bilayer WSe2 are a platform for novel quantum transport and quantum optoelectronic investigations of WSe2, as well as for potential applications in coherent valleytronics. In this presentation, we discuss design considerations and implementations for the fabrication of ~100 nm diameter gate-defined, p-type quantum dots in monolayer and bilayer WSe2. The devices were controlled using a combination of bottom confining gates and a top accumulation gate, with hBN used for gate insulation and encapsulation of the WSe2. Top hBN and WSe2 were transferred onto Pt for reliable p-type bottom contact.

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Presenters

  • Jeb Stacy

    Physics, Univ of Arkansas-Fayetteville, University of Arkansas

Authors

  • Jeb Stacy

    Physics, Univ of Arkansas-Fayetteville, University of Arkansas

  • Shiva Davari Dolatabadi

    Physics, Univ of Arkansas-Fayetteville

  • Alejandro Mercado Tejerina

    Physics, Univ of Arkansas-Fayetteville

  • Jeremy Tull

    Physics, Univ of Arkansas-Fayetteville

  • Rabindra Basnet

    Physics, Univ of Arkansas-Fayetteville

  • Krishna Pandey

    Physics, Univ of Arkansas-Fayetteville, Univ of Arkansas-Fayetteville

  • Md Nabi

    Physics, Univ of Arkansas-Fayetteville

  • Kenji Watanabe

    National Institute for Materials Science, Japan, National Institute for Material Science, National Institute for Materials Science, National Institute for Materials Science, Tsukuba, Research Center for Functional Materials, NIMS, nims, Advanced Materials Laboratory, National Institute for Materials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, NIMS, National Institute for Material Science - Japan, NIMS Tsukuba, National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan., National Institute for Materials Science (NIMS), National Institute for Materials Science,Tsukuba, Ibaraki 305-0047, Japan, Advanced Materials Laboratory, NIMS, Japan, National Institute for Materials Science,1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Materials Science, National Institute for Materials Science, University of Tsukuba, National Institute for Materials Science, Tsukuba, Japan, National Institute for Material Science, Japan, National Institue for Material Science, Tsukuba, Advanced Materials Laboratory, NIMS, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan, Advanced Matrials Lab, NIMS, National Institute for Material Science, Tsukuba, Japan, National institute for materials science, NIMS-Tsukuba, NIMS, Japan, National Institute for Materials Science, Namiki Tsukuba Ibaraki, Japan, NIRM, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, Advanced Materials Laboratory, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science 1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science (Japan), Physics, NIMS, National Institute of Materials Science, Japan, National Institute of Materials Science (NIMS), National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan, NIMS - Tsukuba

  • Takashi Taniguchi

    National Institute for Materials Science, Japan, National Institute for Material Science, National Institute for Materials Science, National Institute for Materials Science, Tsukuba, Research Center for Functional Materials, NIMS, nims, Advanced Materials Laboratory, National Institute for Materials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, NIMS, National Institute for Material Science - Japan, NIMS Tsukuba, National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan., National Institute for Materials Science (NIMS), National Institute for Materials Science,Tsukuba, Ibaraki 305-0047, Japan, Advanced Materials Laboratory, NIMS, Japan, National Institute for Materials Science,1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Materials Science, National Institute for Materials Science, University of Tsukuba, National Institute for Materials Science, Tsukuba, Japan, National Institue for Material Science, Tsukuba, Advanced Materials Laboratory, NIMS, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan, Advanced Matrials Lab, NIMS, National Institute for Material Science, Tsukuba, Japan, National institute for materials science, NIMS-Tsukuba, NIMS, Japan, National Institute for Materials Science, Namiki Tsukuba Ibaraki, Japan, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, Advanced Materials Laboratory, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science 1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science (Japan), Physics, NIMS, National Institute of Materials Science, Japan, National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan, NIMS - Tsukuba

  • Jin Hu

    Univ of Arkansas-Fayetteville, Physics, Univ of Arkansas-Fayetteville, University of Arkansas

  • Hugh Churchill

    Physics, University of Arkansas, Physics, Univ of Arkansas-Fayetteville, University of Arkansas